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APTCV40H60CT1G
Full - Bridge CoolMOS & Trench + Field Stop(R) IGBT Power module Trench & Field Stop(R) IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80C CoolMOSTM Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25C
Application
3 4
* Solar converter Features
Q3
Q1 CR1 5 CR3 6 Q2 7 1
2
Q4 9
* Q2, Q4 CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged - Fast intrinsic diode * Q1, Q3 Trench & Field Stop IGBT(R) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current * SiC Schottky Diode (CR1, CR3) Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF
8 11 NTC
10
12
Top switches : Trench + Field Stop IGBT(R) Bottom switches : CoolMOSTM
* Very low stray inductance * Internal thermistor for temperature monitoring * High level of integration Benefits * * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 3/4 must be shorted together
All ratings @ Tj = 25C unless otherwise specified
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APTCV50H60CT1G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
November, 2007
APTCV40H60CT1G
1. Top switches 1.1 Top Trench + Field Stop IGBT(R) characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 80 50 100 20 176 100A @ 550V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 150C VGE = VCE , IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 50A RG = 8.2 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 50A Tj = 25C RG = 8.2 Tj = 150C Min Typ 3150 200 95 110 45 200 40 120 50 250 60 0.3 0.43 1.35 1.75 0.85 Max Unit pF
ns
ns
mJ
November, 2007 APTCV50H60CT1G - Rev 0
mJ
C/W
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APTCV40H60CT1G
1.2 Top SiC diode characteristics (CR1, CR3)
Symbol Characteristic VRRM IRM IF(AV) VF QC C RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C
Tc = 100C
Min 600
Typ 50 100 10 1.6 2 14 65 50
Max 200 1000 1.8 2.4
Unit V A A V nC pF
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Junction to Case Thermal resistance
VR=600V
50% duty cycle
IF = 10A
Tj = 25C Tj = 175C
IF = 10A, VR = 300V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
2.5
C/W
2. Bottom switches 2.1 Bottom CoolMOSTM characteristics Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 36 27 115 20 83 250 20 1 1800 Unit V A V m W A mJ
Tc = 25C
Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 3
Typ
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APTCV50H60CT1G - Rev 0
November, 2007
VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
4
Max 100 5000 83 5 100
Unit A m V nA
APTCV40H60CT1G
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff RthJC Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Junction to Case Thermal resistance
Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 36A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 36A RG = 5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5
Min
Typ 7.2 0.041 250 43 135 21 30 240 52 531 590 762 725
Max
Unit nF
nC
ns
J
J 0.5
C/W
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 36A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 210 350 2 5.4 Min Typ 36 27 Max Unit A 1.2 40 V V/ns ns C
IS = - 36A VR = 350V diS/dt = 100A/s
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 36A di/dt 100A/s VR VDSS Tj 150C
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APTCV40H60CT1G
3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 - T25 T
Min
Typ 50 3952
Max
Unit k K
4. Package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 150* 125 100 4.7 80
Unit V C N.m g
Tj=175C for Trench & Field Stop IGBT
5. SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTCV40H60CT1G
6. Top switches curves 6.1 Top Trench + Field Stop IGBT(R) typical performance curves
Output Characteristics (VGE=15V) Output Characteristics 100
TJ = 150C VGE=19V
100
TJ=25C
80
IC (A)
TJ=125C
80 IC (A)
TJ=150C VGE=13V
60 40 20 0 0 0.5 1
TJ=25C
60
VGE=15V
40 20 0
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
100 80 60 40 20 0 5
Transfert Characteristics 3.5
TJ=25C
Energy losses vs Collector Current 3 2.5 E (mJ)
VCE = 300V VGE = 15V RG = 8.2 TJ = 150C
Eoff
IC (A)
2 1.5 1
TJ=125C TJ=150C TJ=25C
0.5 0 11 12 0 20 40 IC (A) 60 80
Eon
6
7
8
9
10
100
VGE (V) Switching Energy Losses vs Gate Resistance 3 2.5 2 E (mJ) 1.5 1 0.5 0 5 15 25 35 45 55 Gate Resistance (ohms) 65
Eon Eoff
Reverse Bias Safe Operating Area 125 100 IC (A) 75 50 25 0 0 100 200 300 400 VCE (V) 500 600 700
VGE=15V TJ=150C RG=8.2
VCE = 300V VGE =15V IC = 50A TJ = 150C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 0.7
0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTCV50H60CT1G - Rev 0
November, 2007
0.5
APTCV40H60CT1G
6.2 Top SiC diode typical performance curves
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (C/W) 2.5 2 1.5 1 0.5 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 200 IR Reverse Current (A) 160 120 80 40 0 200 TJ=175C TJ=125C TJ=75C TJ=25C
20
IF Forward Current (A)
TJ=25C
TJ=75C
15 10 5 0 0 0.5
TJ=175C
TJ=125C
1
1.5
2
2.5
3
3.5
300
400
500
600
700
800
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
VR Reverse Voltage (V)
400 350 C, Capacitance (pF) 300 250 200 150 100 50 0 1 10 100 VR Reverse Voltage 1000
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APTCV40H60CT1G
7. Bottom switches curves 7.1 Bottom CoolMOSTM typical performance curves
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60 ID, Drain Current (A) ID, Drain Current (A) 50 40 30 20 10 0 0 1 2 3 4 5 6 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 10 20 30 40 50 60 70 80 ID, Drain Current (A)
VGS=20V 6V 5.5V VGS=15&10V 6.5V
Transfert Characteristics 80
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
60
40
TJ=125C
20
TJ=125C TJ=25C
0 0 2 4 6 8 VGS, Gate to Source Voltage (V) 10
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 40 ID, DC Drain Current (A)
Normalized to VGS=10V @ 18A VGS=10V
30
20
10
25
50 75 100 125 TC, Case Temperature (C)
150
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APTCV40H60CT1G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.00 VGS(TH), Threshold Voltage (Normalized) 0.95 0.90 0.85 0.80 0.75 0.70 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 10000 1000 100 10 1 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Crss Ciss Coss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 18A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
1 ms 10 ms
1
1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300
November, 2007 9 - 10 APTCV50H60CT1G - Rev 0
ID=36A TJ=25C
VDS=120V VDS=300V VDS=480V
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APTCV40H60CT1G
300 250
td(on) and td(off) (ns) Delay Times vs Current 80
td(off) VDS=400V RG=5 TJ=125C L=100H
Rise and Fall times vs Current
150 100 50 0 0
VDS=400V RG=5 TJ=125C L=100H td(on)
tr and tf (ns)
200
60
tf
40 tr 20
0
10
20
30
40
50
60
0
10
20
30
40
50
60
ID, Drain Current (A) Switching Energy vs Current 1.6 Switching Energy (mJ) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 ID, Drain Current (A) 60 Eon
VDS=400V RG=5 TJ=125C L=100H
ID, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ)
VDS=400V ID=36A TJ=125C L=100H
Eoff
3
Eoff Eon
2
1
0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A)
Operating Frequency vs Drain Current 200 160 120 80 40 0 5
VDS=400V D=50% RG=5 TJ=125C TC=75C
ZCS
Frequency (kHz)
100
TJ=150C
ZVS
10
TJ=25C
hard switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
November, 2007 10 - 10 APTCV50H60CT1G - Rev 0
10
15 20 25 30 ID, Drain Current (A)
35
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG".
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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